Session information

Poster presentation

15 Crystal Engineering » 15.6 Group IV Compound Semiconductors (SiC)

[16p-PA05-1~3] 15.6 Group IV Compound Semiconductors (SiC)

Thu. Mar 16, 2023 1:30 PM - 3:30 PM PA05 (Poster)

△：Presentation by Applicant for JSAP Young Scientists Presentation Award
▲：English Presentation
▼：Both of Above
No Mark：None of Above

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1:30 PM - 3:30 PM

[16p-PA05-1] Fundamental analysis of the effect of excess electrons and holes on the stability of SiC polytypes and stacking faults using first-principles calculations

〇Hiroki Sakakima¹, Satoshi Izumi¹ (1.Univ. of Tokyo)

1:30 PM - 3:30 PM

[16p-PA05-2] Step unbunching phenomenon on 4H-SiC substrate surface

〇(DC)Ryotaro Sakakibara¹, Wataru Norimatsu¹ (1.Nagoya Univ.)

1:30 PM - 3:30 PM

[16p-PA05-3] Development of a new charge transfer interatomic potential for 4H-SiC and application for the contraction of partial BPDs

〇Atsuo Hirano¹, Hiroki Sakakima¹, Asuka Hatano¹, Satoshi Izumi¹ (1.Univ. of Tokyo)

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