Oral presentation

15 Crystal Engineering » 15.4 III-V-group nitride crystals

[17p-B401-1~15] 15.4 III-V-group nitride crystals

Fri. Mar 17, 2023 1:15 PM - 5:30 PM B401 (Building No. 2)

Hideaki Murotani(Tokuyama College), Maki Kushimoto(Nagoya Univ.), Takao Oto(Yamagata Univ.)

△：Presentation by Applicant for JSAP Young Scientists Presentation Award
▲：English Presentation
▼：Both of Above
No Mark：None of Above

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1:15 PM - 1:30 PM

△ [17p-B401-1] Improvement of AlGaN UV-B LD performance by improving the AlGaN underlayer quality

〇(B)Yoshinori Imoto¹, Ryota Hasegawa¹, Ayumu Yabutani¹, Koki Hattori¹, Ryosuke Kondo¹, Toma Nishibayashi¹, Eri Matsubara¹, Ryuichiro Sakakima¹, Ryoya Yamada¹, Sho Iwayama^1,2, Motoaki Iwaya¹, Tetsuya Takeuchi¹, Satoshi Kamiyama¹, Hideto Miyake² (1.Meijo Univ., 2.Mie Univ.)

1:30 PM - 1:45 PM

△ [17p-B401-2] Analysis of alteration layer formed by treating AlN with saturated vapor pressure water

〇(M1)Eri Matsubara¹, Ryota Hasegawa¹, Toma Nishibayashi¹, Ayumu Yabutani¹, Ryoya Yamada¹, Ryosuke Kondo¹, Sho Iwaya^1,2, Motoaki Iwaya¹, Tetsuya Takeuchi¹, Satoshi Kamiyama¹, Shinya Kumagai¹, Takahiro Maruyama¹, Shintaro Kobayashi³, Taiji Yamamoto³, Hideto Miyake² (1.Meijo University, 2.Mie University, 3.Rigaku Corp.)

1:45 PM - 2:00 PM

△ [17p-B401-3] Crystal orientation depedence of altered layer in saturated vapor water treatment

〇(B)Ryoya Yamada¹, Eri Matsubara¹, Ryota Hasegawa¹, Ryosuke Kondo¹, Ayumu Yabutani¹, Koki Hattori¹, Toma Nishibayashi¹, Yoshinori Imoto¹, Ryuitiro Sakakima¹, Sho Iwayama^1,2, Motoaki Iwaya¹, Tetsuya Takeuti¹, Satoshi Kamiyama¹, Shinya Kumagai¹, Ryuji Maruyama¹, Hideto Miyake², Shintaro Kobayashi³, Taiji Yamamoto³ (1.Meijo Univ, 2.Mie Univ, 3.Rigaku Corp)

2:00 PM - 2:15 PM

△ [17p-B401-4] Investigation of vertical AlGaN-based UV-B devices by lift-off process with saturated vapor pressure water

〇Toma Nishibayashi¹, Eri Matsubara¹, Ayumu Yabutani¹, Ryoya Yamada¹, Ryosuke Kondo¹, Ryota Hasegawa¹, Syo Iwayama^1,2, Motoaki Iwaya¹, Tetsuya Takeuchi¹, Satosi Kamiyama¹, Kohei Miyoshi³, Kochi Naniwae³, Hideto Miyake² (1.Meijou Univ., 2.Mie Univ., 3.Ushio Inc.)

2:15 PM - 2:30 PM

△ [17p-B401-5] Investigation of p-layer side structure for improving injection efficiency in AlGaN-based UV-B laser diodes

〇Ryosuke Kondo¹, Ryota Hasegawa¹, Ayumu Yabutani¹, Eri Matsubara¹, Koki Hattori¹, Sho Iwayama^1,2, Motoaki Iwaya¹, Tetsuya Takeuchi¹, Satoshi Kamiyama¹, Koichi Naniwae³, Kohei Miyoshi³, Hideto Miyake² (1.Meijo Univ., 2.Mie Univ., 3.Ushio Inc.)

2:45 PM - 3:00 PM

[17p-B401-6] 【Highlighted Presentation】Development of 230 nm Wavelength Range UV-LEDs on Sputtered and Annealed AlN

〇Kenjiro Uesugi^1,2, Shuhei Ichikawa^3,4, Shiyu Xiao⁵, Kanako Shojiki^3,5, Takao Nakamura^5,6, Masahiko Tsuchiya⁷, Kazunobu Kojima³, Hideto Miyake⁵ (1.MRPCO, Mie Univ., 2.Grad. Sch. of RIS, Mie Univ., 3.Grad. Sch. of Eng., Osaka Univ., 4.Research Center for UHVEM, Osaka Univ., 5.Grad. Sch. of Eng., Mie Univ., 6.IIS, The Univ. of Tokyo, 7.Stanley Electric Co.)

3:00 PM - 3:15 PM

[17p-B401-7] Localized emission behavior of AlGaN films on sputtered and annealed AlN templates

〇Shuhei Ichikawa^1,2, Kenjiro Uesugi^3,4, Kazuki Saito¹, Shiyu Xiao⁵, Kanako Shojiki^1,5, Takao Nakamura^5,6, Osamu Maida¹, Hideto Miyake⁵, Kazunobu Kojima¹ (1.Grad. Sch. of Eng., Osaka Univ., 2.Research Center for UHVEM, Osaka Univ., 3.MRPCO, Mie Univ., 4.Grad. Sch. of RIS, Mie Univ., 5.Grad. Sch. of Eng., Mie Univ., 6.IIS, The Univ. of Tokyo)

3:15 PM - 3:30 PM

[17p-B401-8] Short-term degradation mechanisms of 280-nm-band AlGaN LEDs

〇Shigefusa Chichibu¹, Kohei Shima¹, Takumi Kasuya¹, Kengo Nagata², Koji Okuno², Yoshiki Saito², Hisanori Ishiguro³, Tetsuya Takeuchi³ (1.Tohoku Univ., 2.Toyoda Gosei Co. Ltd., 3.Meijo Univ.)

3:30 PM - 3:45 PM

[17p-B401-9] Current-induced p-type activation of Mg-doped and highly Al compositional (x>0.8) AlGaN observed during initial energization of 220 nm band far-UVC LEDs

〇Noritoshi Maeda¹, Iwaisako Yasushi², Hirayama Hideki¹ (1.RIKEN, 2.Nippon Tungsten)

4:00 PM - 4:15 PM

[17p-B401-10] Temperature dependence of internal quantum efficiency and lifetime for 265nm-emitting AlGaN quantum wells on bulk AlN substrates

〇Shiki Tanaka¹, Ryota Ishii¹, Mitsuru Funato¹, Yoichi Kawakami¹ (1.Kyoto Univ.)

4:15 PM - 4:30 PM

[17p-B401-11] Temperature dependence of optical polarization in AlGaN-based multiple quantum wells with emission wavelength around 230 nm

Kunio Himeno¹, Kosuke Inai¹, Kaichi Tani¹, Hiromasa Hayashi¹, 〇Hideaki Murotani², Satoshi Kurai¹, Narihito Okada¹, Kenjiro Uesugi^3,4, Hideto Miyake⁵, Yoichi Yamada¹ (1.Yamaguchi Univ., 2.NIT, Tokuyama Coll., 3.MRPCO, Mie Univ., 4.Grad. Sch. of RIS, Mie Univ., 5.Mie Univ.)

4:30 PM - 4:45 PM

[17p-B401-12] Optical Pulse Combining of Gain-switching GaN-based Semiconductor Laser Diodes for High Peak Power

〇Yuta Mabuchi¹, Shoya Ota¹, Harumichi Suzuki¹, Daichi Imai¹, Takao Miyajima¹ (1.Meijo Univ.)

4:45 PM - 5:00 PM

[17p-B401-13] Analysis of the in-gap optical absorption processes of Al_1-xIn_xN thin films by using photothemal deflection spectroscopy

〇Kouki Noda¹, Yuto Murakami¹, Hayata Toyoda¹, Kana Shibata¹, Mayu Nomura¹, Hayato Ichikawa¹, Daichi Imai¹, Takao Miyajima¹, Makoto Miyoshi², Tetsuya Takeuchi¹ (1.Meijo University, 2.Nagoya Inst. of Tech.)

5:00 PM - 5:15 PM

△ [17p-B401-14] Relationship between external quantum efficiency and self-absorption in freestanding semiconductor crystals with direct bandgaps

〇Koshi Sano¹, Shuhei Ichikawa¹, Osamu Maida¹, Kazunobu Kojima¹ (1.Osaka Univ.)

5:15 PM - 5:30 PM

[17p-B401-15] Exciton dynamics in GaN/AlN quantum well analyzed by phononic-excitonic-radiative model

〇(D)Masaya Chizaki¹, Kensuke Oki¹, Yoshihiro Ishitani¹ (1.Chiba Univ.)

Session information