10:30 AM - 10:45 AM
△ [15a-A408-7] In-situ observation of initial growth of heteroepitaxial diamond on Ir/MgO substrate
Keywords:Diamond, heteroepitaxial, in-situ observation
In order to practical application of diamond semiconductor materials, it is necessary to achieve higher quality and larger diameter in the future, and for this purpose, reduction of dislocation and suppression of warpage are important. In this study, heteroepitaxial diamond growth on Ir/MgO substrates was performed using a microwave plasma CVD system in order to elucidate the growth mechanism. The temperature, reflectivity, and warpage were measured in-situ, and the initial growth pattern was observed by FE-SEM. The relationship between the initial growth pattern of diamond and warpage was clarified.