[15a-A408-1~10] 6.2 Carbon-based thin films

△ [15a-A408-7] In-situ observation of initial growth of heteroepitaxial diamond on Ir/MgO substrate

〇Takahiro Ihara¹, Kimura Yutaka², Takasu Tomoya³, Oshima Ryuji^1,3, Sawabe Athuhito², Aida Hideo¹ (1.Nagaoka Univ. of Tech., 2.Aoyama Gakuin Univ., 3.Disco)

Keywords:Diamond, heteroepitaxial, in-situ observation

In order to practical application of diamond semiconductor materials, it is necessary to achieve higher quality and larger diameter in the future, and for this purpose, reduction of dislocation and suppression of warpage are important. In this study, heteroepitaxial diamond growth on Ir/MgO substrates was performed using a microwave plasma CVD system in order to elucidate the growth mechanism. The temperature, reflectivity, and warpage were measured in-situ, and the initial growth pattern was observed by FE-SEM. The relationship between the initial growth pattern of diamond and warpage was clarified.