[15a-A501-1~6] 3.10 Photonic structures and phenomena (formerly 3.11)

▲ [15a-A501-2] Quantum electrodynamic analysis in a SiC photonic nanocavity with Si-vacancy center by considering the effect of phonon sideband

〇(PC)Heungjoon Kim¹, Bong-Shik Song^1,2, Takashi Asano¹, Makoto Yamaguchi³, Susumu Noda¹ (1.Kyoto Univ., 2.Sungkyunkwan Univ., 3.Tokai Univ.)

Keywords:Cavity quantum electrodynamics, Color center, Silicon carbide

Recently, color center-based cavity quantum electrodynamic (c-QED) system has been intensively studied because the system enables the realization of novel quantum devices. However, previous theoretical studies on the c-QED system have not taken into account the phonon effects even though the photoluminescence (PL) from the color centers exhibits the strong phonon side band emission. In this work, we theoretically investigate c-QED phenomena including the emitter-phonon interaction for the first time, for a color center in SiC. We assume the color center as a two-level system (TLS) and consider that the emission energy is temporally fluctuated by the local phonons. We show that our model reproduces well the experimental PL spectrum in bulk SiC, which consists of a sharp zero-phonon line (ZPL) emission at 917 nm and several phonon peaks. Furthermore, we introduce a photonic cavity in our model and show that the photon emission is largely concentrated into ZPL. Our mode will be useful for exploring c-QED systems based on color centers.