[15a-A501-1~6] 3.10 フォトニック構造・現象（旧3.11）

▲ [15a-A501-3] Inverse Design of High-Q SiN Photonic Crystal Cavities

〇(B)Peter Aubrey Heidt¹、Masato Takiguchi^1,2、Hisashi Sumikura^1,2、Akihiko Shinya^1,2、Masaya Notomi^1,2,3 (1.NTT BRL、2.NTT Nanophotonics、3.Tokyo Tech)

キーワード：silicon nitride, quality factor, inverse design

In this work, we use Legume and a novel implementation of finite element method (FEM) with parallel simplex algorithm (PSA) to inversely design a series of Lx-type SiN PhC cavities, and present the first ever Lx-type cavity in SiN (n = 2.0) with Q greater than one million. This record Q exceeds the highest previously reported Q in a SiN Lx-type PhC cavity by 2 orders of magnitude with 30% smaller mode volume (V).