[15a-A501-1~6] 3.10 Photonic structures and phenomena (formerly 3.11)

[15a-A501-4] Toward the development of nanocavity Raman silicon laser
excited in a 1.1 μm wavelength band (Ⅱ)

〇(M1)Yu Shimomura¹, Takashi Asano², Susumu Noda², Yasushi Takahashi¹ (1.Osaka Met. Univ., 2.Kyoto Univ.)

Keywords:nanocavity, Photonic crystals, Raman scattering

We have developed Si Raman lasers with high-Q photonic crystal nanocavities in the 1.55 μm and 1.31 μm bands. Since Raman lasers can operate over a wide range of wavelengths, we are aiming at shorter wavelengths and pumping in the 1.1 μm band, which is near the band gap of Si. A lower threshold due to an increase in Raman scattering probability is expected when the operating wavelength is shortened. In this study, we report the first successful observation of spontaneous Raman scattering when a nanocavity with a high Q-value in the 1.1 μm band is resonantly excited.