Wavelength dependence of internal absorption loss in nanocavity silicon Raman laser

Shunsuke Ikuta; Yuji Ota; Takashi Asano; Susumu Noda; Yasushi Takahashi

Presentation information

Oral presentation

3 Optics and Photonics » 3.14 Silicon photonics and integrated photonics (formerly 3.15)

[15a-A502-1~8] 3.14 Silicon photonics and integrated photonics (formerly 3.15)

Wed. Mar 15, 2023 9:00 AM - 11:15 AM A502 (Building No. 6)

Takehiko Kikuchi(Sumitomo elec. corp.), Rui Tang(Univ. of Tokyo)

9:45 AM - 10:00 AM

[15a-A502-4] Wavelength dependence of internal absorption loss in nanocavity silicon Raman laser

〇(M2)Shunsuke Ikuta¹, Yuji Ota¹, Takashi Asano², Susumu Noda², Yasushi Takahashi³ (1.Osaka Pref. Univ., 2.Kyoto Univ., 3.Osaka Met. Univ.)

Keywords:internal absorption, Silicon, wavelength dependence

In the Raman lasers we study, experimental Q-values of more than 1 million are obtained stably in the Stokes mode, while significantly low experimental Q-values are frequently obtained in the pump mode. In this report, we found a significant wavelength dependence of the internal absorption loss in the pump mode.