[15a-A502-1~8] 3.14 Silicon photonics and integrated photonics (formerly 3.15)

△ [15a-A502-6] Epitaxial Growth of SiGe/Ge Layers for Photonic Integration on a Bulk Si Platform

〇(M1)Makito Sato¹, Akira Nishiyori¹, Jose A. Piedra-Lorenzana¹, Takeshi Hizawa¹, Yasuhiko Ishikawa¹ (1.Toyohashi Univ. Tech.)

Keywords:silicon photonics, optical waveguide, silicon germanium

A SiGe layer epitaxially grown on Si has been investigated as an optical waveguide material on a bulk Si platform. In particular, a Si_0.5Ge_0.5 alloy theoretically works as a waveguide operating in the optical communication wavelengths, as reported previously. In this report, SiGe layers are epitaxially grown directly on a Si wafer by chemical vapor deposition. A Ge layer is also grown on the SiGe layer.