[15a-A502-1~8] 3.14 シリコンフォトニクス・集積フォトニクス（旧3.15）

▲ [15a-A502-8] All-Group-IV GeSn Edge-Emitting Laser on Silicon for Silicon Photonics

〇Guo-En Chang¹、Bo-Rui Wu¹、Yin-Pu Huang¹、Cheng-Ting Kuo¹ (1.National Chung Cheng Univ.)

キーワード：GeSn alloys, Lasers, Photoluminescence

Conventional group-IV semiconductors, including Si, Ge, and their alloys, are indirect-bandgap materials, resulting in extremely low emission efficiency through efficient direct-gap transition. Recently, a new class of group-IV semiconductor, GeSn alloy, has emerged for efficient light emitters. The introduction of Sn into Ge can effectively modulate the bandgap structure and eventually achieve direct bandgap with a sufficient of Sn content, thus enabling efficient light emission. Here, we demonstrate optically-pumped GeSn edge-emitting lasers (EELs) on Si as a crucial on-chip light sources for silicon photonics.