[15a-D511-1~11] 15.7 Crystal characterization, impurities and crystal defects

[15a-D511-4] Calculation of atomic vacancy clusters near Si(100) surface using ANN potential

〇(M2)Masayoshi Sato¹, Tatsuya Yokoi², Eiji Kamiyama³, Yusuke Noda³, Koji Sueoka³ (1.Graduate School of Engineering, Okayama Pref. Univ., 2.Graduate School of Engineering, Nagoya Univ., 3.Faculty of Computer Science and Systems Engineering, Okayama Pref. Univ.)

Keywords:atomic vacancy, ANN potential

It is important to understand the properties of atomic vacancy (V) clusters that exist near the surface of semiconductor Si wafers. In this study, an ANN potential was created by adding the calculation results of a surface model containing V to the training data, and the stability of a V cluster (V₃₅) consisting of 35 V with a surface structure was calculated.