Growth of Group III Impurities Doped Rocksalt-structured MgZnO Films by Mist CVD

Masaki Matsuda; Kotaro Ogawa; Yuichi Ota; Tomohiro Yamaguchi; Kentaro Kaneko; Shizuo Fujita; Tohru Honda; Takeyoshi Onuma

Presentation information

Oral presentation

21 Joint Session K "Wide bandgap oxide semiconductor materials and devices" » 21.1 Joint Session K "Wide bandgap oxide semiconductor materials and devices"

[15a-E102-1~10] 21.1 Joint Session K "Wide bandgap oxide semiconductor materials and devices"

Wed. Mar 15, 2023 9:15 AM - 12:00 PM E102 (Building No. 12)

Mutsumi Sugiyama(Tokyo Univ. of Sci.), Tomoki Abe(Tottori Univ.)

11:15 AM - 11:30 AM

△ [15a-E102-8] Growth of Group III Impurities Doped Rocksalt-structured MgZnO Films by Mist CVD

〇Masaki Matsuda¹, Kotaro Ogawa², Yuichi Ota³, Tomohiro Yamaguchi¹, Kentaro Kaneko⁴, Shizuo Fujita⁵, Tohru Honda¹, Takeyoshi Onuma¹ (1.Kogakuin Univ., 2.ORC Manu., 3.TIRI, 4.Ritsumeikan Univ., 5.Kyoto Univ.)

Keywords:MgZnO, doping, electrical characterization

Rocksalt-structured (RS) MgZnO is attracting attention as an emerging ultra-wide bandgap semiconductor for far UV light emitter. Control of n-type conductivity is an important function to realize the RS-MgZnO based far UV emitter. In this study, we investigated the roles of In, Ga, Al doped in RS-MgZnO films grown by mist CVD. Electrical characterization of group Ⅲ impurities doped MgZnO films will be reported at the conference.