9:30 AM - 11:30 AM
[15a-PA01-12] Fabrication of transfer-free graphene FETs on sapphire substrates utilizing the agglomeration phenomenon of the Ni pattern with ultra-fine structure
Keywords:graphene, FET, the metal agglomeration phenomenon
We have reported that transfer-free graphene can be formed on insulating substrates by using a metal catalyst aggregation technique. We also fabricated FETs with transfer-free graphene and observed drain current modulations by applied gate voltages. Furthermore, we confirmed that graphene synthesis and device pattern formation can proceed simultaneously by controlling metal aggregation using pre-formed Ni patterns, and that graphene layers with several thicknesses are formed in the vicinity of Ni patterns. In the previous report, we attempted to use electron beam (EB) lithography to achieve submicron spacing between Ni patterns and to synthesize a uniform graphene film between them; however, an increase from the designed pattern spacing was observed after the process. In this research, we have attempted to fabricate Ni patterns with submicron spacing and to form graphene by EB lithography. Moreover, we also fabricated the graphene FETs.