[15a-PA01-1~56] 17 Nanocarbon Technology (Poster)

[15a-PA01-40] CVD Growth of MoS₂ on Nitride Semiconductors using Ar/O₂ Carrier Gas

〇Ryusei Kawase¹, Neo Sasuga¹, Rong Kaipeng¹, Kuddus Abdul², Hideto Miyake³, Tsutomu Araki¹, Shinichiro Mouri¹ (1.Ritsumeikan Univ., 2.Ritsumeikan R-GIRO, 3.Mie Univ.)

Keywords:layered materials, Transition Metal Dichalcogenide, Nitride semiconductors

MoS₂ has large potential for applications in the field of next-generation electronic semiconductor devices composed of few atomic layers. Therefore, it is meaningful to synthesized MoS₂ directly on nitride semiconductors such as GaN and AlN, because it enables the application of broadband photodetectors or high mobility field-effect transistors. In this work, we report the results of CVD growth of MoS₂ on nitride semiconductors using Ar/O₂ as carrier gas.