Application of CVD-grown few-layer hBN to magnetic tunnel junction devices

Hiroki Kusunose; Satoru Fukamachi; Kenji Kawahara; Kenichiro Sakai; Takashi Kimura; Hiroki Hibino; Hiroki Ago

Presentation information

Symposium (Oral)

Symposium » Recent progresses of device applications of low-dimensional materials

[15p-A205-1~12] Recent progresses of device applications of low-dimensional materials

Wed. Mar 15, 2023 1:30 PM - 6:05 PM A205 (Building No. 6)

Kosuke Nagashio(Univ. of Tokyo), Yutaka Ohno(Nagoya Univ.)

3:10 PM - 3:25 PM

△ [15p-A205-5] Application of CVD-grown few-layer hBN to magnetic tunnel junction devices

〇Hiroki Kusunose¹, Satoru Fukamachi², Kenji Kawahara², Kenichiro Sakai³, Takashi Kimura⁴, Hiroki Hibino⁵, Hiroki Ago^1,2 (1.IGSES, Kyushu Univ., 2.GIC, Kyusyu Univ., 3.Kurume Kosen, 4.Grad. Sci., Kyushu Univ., 5.Kwansei Gakuin Univ.)

Keywords:h-BN, MTJ, MRAM

We synthesize high-quality and large area few-layer hBN by CVD method. We develop magnetic tunnel junction (MTJ) device and measure MR ratio. We successfully obtained few to 15% MR ratios.