[15p-A301-1~13] 15.6 Group IV Compound Semiconductors (SiC)

[15p-A301-10] Hall evaluation of Si-face 3C/4H-SiC heterojunction

〇Hiroyuki Sazawa¹, Shigeyuki Kuboya¹, Hitoshi Umezawa¹, Tomohisa Kato¹, Yasunori Tanaka¹ (1.AIST ADPERC)

Keywords:heterojunction, 3C/4H-SiC, two-dimensional hole gas

The Hall characteristic of Si-face 3C/4H-SiC heterojunctions was evaluated in the temperature range of 80-300K. The conductivity type was P-type . The sheet carrier density was measured as about 1.6 x10¹³cm^-2 and did not depend much on temperature. This value is close to 1.35 x10¹³cm^-2, which has been reported as the calculated value of the fixed charge concentration appearing in the polarization of 4H-SiC. From these facts, we speculated that the carriers are two-dimensional hole gases induced at the junction interface by the polarization of 4H-SiC.