[15p-A301-1~13] 15.6 Group IV Compound Semiconductors (SiC)

[15p-A301-11] Influence of pulsed applied voltage on voltage-controlled anodization of fluorescent 4H-SiC

〇(B)Taisei Mizuno¹, Keita Kodera¹, Shota Akiyoshi¹, Motoaki Iwaya¹, Tetsuya Takeuchi¹, Satoshi Kamiyama¹, Weifang Lu², Yiyu Ou³ (1.Meijo Univ., 2.Xianmen Univ., 3.Technical University of Denmark)

Keywords:semiconductor, optical device, SiC

By forming fine holes (porous) on the substrate surface of fluorescent SiC, which is SiC doped with high concentration of B and N, by anodic oxidation etching, it is possible to shorten the wavelength and increase the intensity of the emitted light. It is expected that this will lead to the realization of white LEDs with broad spectrum and high color rendering properties. Fluorescent SiC is difficult to etch, so it has not been possible to obtain pores with sufficient shape and thickness. In this report, it was confirmed that applying a negative bias voltage during anodization is effective for anodization.