2:05 PM - 2:35 PM
[15p-A302-3] Control of hydrogen induced phase transition on strongly correlated oxides and their application
Keywords:oxide, strongly correlated oxides, hydrogen
Designing resistive switching iontronics devices is of a broad interest to energy conversion, logic-memory, and neuromorphic computing pulls. Here, we demonstrate a design of lattice strain engineering for enabling faster diffusional doping in perovskite Nickelate thin films whose electric resistive properties are very sensitive to hydrogen (proton) doping. The mechanism of enhanced proton-induced resistance modulation is studied by precise reciprocal space map and first-principles theoretical methods to provide evidence for proton diffusion which varies depending on the imposed lattice strain. In addition, we report new hydrogen phase diagram on electronic phases using Nuclear Reaction Analysis, construction of proton based resistive switching device, and nanostructured devices.