[15p-A305-1~11] 3.4 レーザー装置・材料（旧3.5）

▲ [15p-A305-6] Laser induced damage threshold evaluation of bonded samples for J-class amplifier system

〇Arvydas Kausas^1,2、Takunori Taira^2,1 (1.Inst. for Mol. Sc.、2.RIKEN)

キーワード：laser induced damage threshold, room temperature bonding, passively Q-switched laser

Laser induced damage threshold was observed and compared to previous reports in sapphire, quartz and Nd:YAG crystals. By use of sub-ns passively Q-switched Nd:YAG/Cr:YAG laser emitting at 1064 nm wavelength, laser induced damage threshold was measured in bulk and bonded crystals. With the help of automated measurement setup, sample evaluation speed was improved.