Grain Boundary Crystallization of Wide Band Gap Lead-Free Tin Perovskite by Surface Passivation

Sota Kikuchi; Takayuki Okamoto; Mengmeng Chen; Qing Shen; Shuzi Hayase

Presentation information

Oral presentation

12 Organic Molecules and Bioelectronics » 12.5 Organic and hybrid solar cells

[15p-A401-1~17] 12.5 Organic and hybrid solar cells

Wed. Mar 15, 2023 1:00 PM - 6:00 PM A401 (Building No. 6)

Qing Shen(UEC), Richard Murdey(Kyoto Univ.), Atsushi Kogo(AIST), Kohei Yamamoto(AIST)

1:45 PM - 2:00 PM

[15p-A401-4] Grain Boundary Crystallization of Wide Band Gap Lead-Free Tin Perovskite by Surface Passivation

〇Sota Kikuchi^1,2, Takayuki Okamoto¹, Mengmeng Chen³, Qing Shen², Shuzi Hayase² (1.CAR MATE, 2.UEC, 3.Toshiba ESS)

Keywords:solar cell, perovskite, wide bandgap

In order to fabricate tin-perovskite-silicon tandem solar cells, which are lead-free tandem solar cells, it is necessary to increase the efficiency of wide bandgap tin-perovskite solar cells with a band gap of 1.6-1.7 eV. In this study, we report on the increase in the curve factor of wide bandgap lead-free tin perovskite by the addition of silicon-based additives.