[15p-A408-1~14] 6.2 Carbon-based thin films

[15p-A408-12] Fabrication of hydrogenated amorphous carbon nitride films with high nitrogen content using the RF plasma CVD of the gas mixtiure of C₂H₂, N₂, and Ar

〇Haruhiko Ito¹, Ryota Watanuki¹, Tsuneo Suzuki¹, Hidetoshi Saitoh¹ (1.Nagaoka Univ Tech)

Keywords:amorphous carbon nitride

Hydrogenated amorphous carbon nnitride films were fabricated by using the RF plasma CVD of the gas mixture of C₂H₂, N₂, and Ar. By fully suppressing then partial pressure of C₂H₂ compared with that of N₂, high [N]/([N]+[C]) ratios were obtained as 0.38 at the mfilm surface and 0.42 at the film inside. Although these ratios were lower than those obtained for the films fabricated using the microwave plasma CVD of the gas mixture of C₂H₂ and N₂, the situation that the [N]/([N]+[C]) ratios of the film inside are higher than those at the fikm surface is reproduced in the present reacction system.