[15p-A409-1~11] 6.3 Oxide electronics

△ [15p-A409-10] Synchrotron-radiation photoemission spectroscopic study on electronic states of SrVO₃/LaAlO₃ heterostructures

〇Asato Wada¹, Tatsuhiko Kanda¹, Daisuke Shiga¹, Yuki Masutake¹, Ryotaro Hayasaka¹, Miho Kitamura², Kohei Yoshimatsu¹, Hiroshi Kumigashira^1,2 (1.IMRAM, Tohoku Univ., 2.IMSS KEK)

Keywords:heterostructure, metal-insulator transition, ARPES

We fabricate SrVO₃/LaAlO₃/SrTiO₃ heterostructures consisted with a Mott-insulator 2-ML SrVO₃ (SVO) thin film, polar oxides LaAlO₃ (LAO) thin film and SrTiO₃ (STO) substrate and perform synchrotron-radiation angle-resolved photoemission spectroscopy (ARPES). ARPES experiments reveal that the 2-ML SVO show quantization states originated from V 3d . These results indicate that SVO show metallization by the holes doping in SrVO₃ layer to compensate the polarity discontinuity at the LAO/STO interface.