The 70th JSAP Spring Meeting 2023

Presentation information

Oral presentation

3 Optics and Photonics » 3.14 Silicon photonics and integrated photonics (formerly 3.15)

[15p-A502-1~18] 3.14 Silicon photonics and integrated photonics (formerly 3.15)

Wed. Mar 15, 2023 1:10 PM - 6:00 PM A502 (Building No. 6)

Shota Kita(NTT), Tomohiro Kita(Waseda Univ.), Taichiro Fukui(Univ. of Tokyo)

3:45 PM - 4:00 PM

[15p-A502-11] Investigation of layer structure for controlling optical confinement factor of active layer in direct bonding GaInAsP/SOI optical devices

Ryuya Sasaki1, Tsukuru Katsuyama1, Yoshitaka Oiso1, Takehiko Kikuchi1, Eissa Moataz1, Tomohiro Amemiya1,2, Nobuhiko Nishiyama1,2,3 (1.Tokyo Tech, 2.Tokyo Tech IIR, 3.PETRA)

Keywords:photonic integrated circuit, silicon photonics

Integration technology is important to realize miniaturization and low power consumption of optical transceivers. To fabricate direct bonding GaInAsP/SOI optical devices with different characteristics from the same epi-wafer, we investigated epitaxial layer structures with a large control range of active-layer optical confinement coefficients in the Si waveguide width by mode-field calculation using simulations. As a result, assuming a superlattice layer thickness of 604 nm, the optical confinement factor can be varied from 2.0 to 4.2 % by adjusting the Si waveguide width in the range of 0 to 5 μm.