[15p-A502-1~18] 3.14 Silicon photonics and integrated photonics (formerly 3.15)

△ [15p-A502-11] Investigation of layer structure for controlling optical confinement factor of active layer in direct bonding GaInAsP/SOI optical devices

〇Ryuya Sasaki¹, Tsukuru Katsuyama¹, Yoshitaka Oiso¹, Takehiko Kikuchi¹, Eissa Moataz¹, Tomohiro Amemiya^1,2, Nobuhiko Nishiyama^1,2,3 (1.Tokyo Tech, 2.Tokyo Tech IIR, 3.PETRA)

Keywords:photonic integrated circuit, silicon photonics

Integration technology is important to realize miniaturization and low power consumption of optical transceivers. To fabricate direct bonding GaInAsP/SOI optical devices with different characteristics from the same epi-wafer, we investigated epitaxial layer structures with a large control range of active-layer optical confinement coefficients in the Si waveguide width by mode-field calculation using simulations. As a result, assuming a superlattice layer thickness of 604 nm, the optical confinement factor can be varied from 2.0 to 4.2 % by adjusting the Si waveguide width in the range of 0 to 5 μm.