[15p-A502-1~18] 3.14 Silicon photonics and integrated photonics (formerly 3.15)

[15p-A502-6] Room-temperature CW operation of hybrid lasers by InP/SOI chip-on-wafer bonding with UV-ozone hydrophilization

〇Takehiko Kikuchi^1,2,3, Munetaka Kurokawa^1,2,3, Naoki Fujiwara^1,2,3, Naoko Inoue^1,2,3, Takuo Hiratani^1,2, Toshiyuki Nitta^1,2,3, Takuya Mitarai^1,2,3, Yuhki Itoh^1,2, Yoshitaka Oiso³, Nobuhiko Nishiyama^1,3, Hideki Yagi^1,2,3 (1.PETRA, 2.TDL, Sumitomo Electric., 3.Tokyo Tech.)

Keywords:III-V/Si hybrid integration, laser, chip-on-wafer bonding

The III-V/Si hybrid integration technologies is very attractive for the realization of a next-generation photonic integrated circuit with high-speed operation and low-power dissipation. Although we have reported hybrid lasers by wafer-to-wafer surface-activated bonding, the investigation of chip-on-wafer bonding is needed towards a multifunctional integration. In this work, we present an InP/SOI chip-on-wafer bonding technique using UV-ozone hydrophilization, and demonstrate the fabrication of hybrid lasers.