Fabrication of InGaN-based red LEDs with MQWs (InGaN/AlGaN/GaN) on relaxed InGaN layers via PSD

Presentation information

Oral presentation

15 Crystal Engineering » 15.4 III-V-group nitride crystals

Wed. Mar 15, 2023 1:00 PM - 6:00 PM B401 (Building No. 2)

Mitsuru Funato(Kyoto Univ.), Hiroto Sekiguchi(Toyohashi Univ. of Tech.), Daisuke Iida(KAUST)

1:00 PM - 1:15 PM

〇Akito Takayama¹, Kohei Ueno¹, Atsushi Kobayashi¹, Hiroshi Fujioka¹ (1.IIS, UTokyo)

Keywords:LED, InGaN, Sputtering