[15p-D221-1~14] 9.5 New functional materials and new phenomena

[15p-D221-3] Inverse spin Hall effect and interface structure in Sb₂Te₃/Ferromagnet

〇Misako Morota¹, Shogo Hatayama¹, Wipakorn Jevasuwan², Naoki Fukata², Yuta Saito¹ (1.AIST, 2.NIMS)

Keywords:Chalcogenaide, topological insulator, Spin Hall Effect

The reverse spin Hall voltage of highly oriented Sb₂Te₃ and NiFe stacked films was measured and investigated in relation to the Sb₂Te₃ film thickness. The results indicated that the inverse spin Hall voltage was observed in all stacked samples with different Sb₂Te₃ thicknesses, and that it was maximum with an Sb₂Te₃ layer thickness of 10 nm, while the linewidth of the ferromagnetic resonance was minimum, which showed an opposite dependence on the Sb₂Te₃ layer thickness. The influence of the interface between the layers on the surface electronic state of Sb₂Te₃ and the interfacial spin conduction is discussed in this presentation.