4:30 PM - 4:45 PM
▲ [15p-D411-11] Diethylzinc passivation of InAs surface quantum dots
Keywords:InAs surface quantum dots, Passivation, Ligand exchange self clean up
InAs surface quantum dots (SQDs) have attracted wide attention for potential applications in optoelectronic devices. However, the presence of surface non-radiative recombination sites (SNRS), i.e., surface states and native oxides, suppresses the photoluminescence (PL). Although conventional wet chemical passivation, e.g., by (NH4)2S, reduces the SNRS and enhances PL, it etches the SQDs and significantly blueshifts the PL emission. Here, we show the PL intensity enhancement of molecular beam epitaxy (MBE)-grown InAs SQDs by atomic layer deposition (ALD)-diethylzinc (DEZ) passivation, which suppresses SQD size shrinkage and PL emission blueshift.