[15p-D411-1~14] 13.6 ナノ構造・量子現象・ナノ量子デバイス

▲ [15p-D411-11] Diethylzinc passivation of InAs surface quantum dots

〇(DC)Hanif Mohammadi¹、Ronel Roca¹、Hyunju Lee¹、Yoshio Ohshita¹、Naotaka Iwata¹、Itaru Kamiya¹ (1.Toyota tech. inst.)

キーワード：InAs surface quantum dots, Passivation, Ligand exchange self clean up

InAs surface quantum dots (SQDs) have attracted wide attention for potential applications in optoelectronic devices. However, the presence of surface non-radiative recombination sites (SNRS), i.e., surface states and native oxides, suppresses the photoluminescence (PL). Although conventional wet chemical passivation, e.g., by (NH₄)₂S, reduces the SNRS and enhances PL, it etches the SQDs and significantly blueshifts the PL emission. Here, we show the PL intensity enhancement of molecular beam epitaxy (MBE)-grown InAs SQDs by atomic layer deposition (ALD)-diethylzinc (DEZ) passivation, which suppresses SQD size shrinkage and PL emission blueshift.