[15p-D411-1~14] 13.6 Nanostructures, quantum phenomena, and nano quantum devices

[15p-D411-9] Effects of valence band mixing in (111) single quantum dots: modulations of PL polarization and effective hole g-factor

〇Reina Kaji¹, Jiyuan Chen¹, Satoru Adachi¹ (1.Hokkaido Univ.)

Keywords:quantum dots, valence band mixing

For the application in quantum information technology, it is important to investigate the spin g-factor and the polarization state in the system of interest. In particular, quantum dots on the (111) plane [(111)-QDs] are promising for the generation of entangled photon pairs due to their small exciton fine structure splitting. However, it have been revealed experimentally that the valence band mixing (VBM) strongly affects the carrier spin properties. In this study, we clarify the effects of VBM on the hole g-factor and polarization state of GaAs (111)-QDs from both experimental and theoretical aspects.