[15p-D419-1~8] 15.1 Bulk crystal growth

[15p-D419-7] Investigation on constitutional supercooling with different growth directions in heavily B-doped CZ-Si single crystal growth

〇(M1)Shota Hosoda¹, Yuki Fukui¹, Toshinori Taishi¹, Yuta Watanabe², Nobumasa Kariya² (1.Shinshu Univ., 2.M.SETEK Co., Ltd.)

Keywords:Silicon, Constitutional supercooling, Heavily B-doped

In heavily doped Si single crystal growth by Czochraski (CZ) method, cellular growth is induced by occurrence of constitutional supercooling due to segregation, and it leads to polycrystallization. In this study, we grew heavily B-doped [100], [110], and [111] Si single crystals and the cell structure induced by constitutional supercooling was investigated.