[15p-D511-1~11] 15.7 Crystal characterization, impurities and crystal defects

[15p-D511-10] High sensitivity infrared absorption spectroscopy and infrared defect dynamics of silicon crystal
(22) Standard measurement procedure of N-complexes

〇Naohisa Inoue¹, Shuichi Kawamata¹, Shuichi Okuda¹ (1.Osaka Metropolitan Univ. Radiation Research center)

Keywords:silicon crystal, nitrogen, infrared absorption

Nitrogen has many complex constructions. They have different thermal behavior and role in grown-in defect formation. Concentration measurement procedure is established only on (NN)O0-2. Shallow thermal donors (STD) can be measured by donor concentration or electronic transition by far IR. Their LVM IR absorption has been found and assigned, (NO)O_0-2 and (ONO)O_0-2. Recently, Ni at 551 cm^-1 and VVNN at 688 cm^-1 have been assigned in as-grown crystal. Various absorption coefficients and their sum multiplied by the conversion coefficient, (α₇₆₆ + α₈₀₁ + α₈₁₀ + α₅₅₁ + α₆₈₈ + α₉₇₃ + α₈₅₅) x k, give the individual and total N complex concentrations.