Hydrogen localization effects on strain relaxation and crystallographic tilting in SiGe

Presentation information

Oral presentation

15 Crystal Engineering » 15.7 Crystal characterization, impurities and crystal defects

Wed. Mar 15, 2023 1:30 PM - 4:45 PM D511 (Building No. 11)

Hidetoshi Suzuki(Miyazaki Univ.), Eiji Kamiyama(GlobalWafers Japan)

2:30 PM - 2:45 PM

〇(M2)Mitsuki Kano¹, Satoru Miyamoto¹, Yasuyoshi Kurokawa¹, Noritaka Usami¹ (1.Nagoya Univ.)

Keywords:silicon germanium, hydrogen, crystal defect