[15p-D511-1~11] 15.7 Crystal characterization, impurities and crystal defects

[15p-D511-7] Dislocation generation from asymmetric tilt boundaries during cast-growth of silicon

〇Yutaka Ohno¹, Hideto Yoshida², Tatsuya Yokoi³, Kenta Yamakoshi³, Takuto Kojima⁴, Katsuyuki Matsunaga³, Patricia Krenckel⁵, Stephan Riepe⁵, Noritaka Usami³ (1.IMR, Tohoku Univ., 2.SANKEN, Osaka Univ., 3.GSE, Nagoya Univ., 4.GSI, Nagoya Univ., 5.Fraunhofer ISE)

Keywords:aymmetric grain boundary, silicon, dislocation sources

During the cast growth of silicon ingots, asymmetric tilt boundaries are frequently introduced, and they can act as an effective dislocation source. The boundaries are cmposed of facets of lower-order twin boundaries, such as sigma-3{111}, and a few % tensile strains are introduced along the facet junctions. Due to the strains, the stress needed for dislocation generation would be reduced along the facet junctions, and therefore dislocations would be preferentially generated at the junctions.