4:15 PM - 4:30 PM
△ [15p-E102-11] Evaluation of band alinement of rutile-Sn1-xGexO2 by XPS
Keywords:tin oxide, Germanium oxide, XPS
Rutile-Sn1-xGexO2 (SGO), which is GeO2 solid solution in SnO2, a typical oxide semiconductor, is an ultrawide-gap semiconductor with a modulatable band gap in the range ~3.7 eV - ~4.7 eV. First-principles calculations have also suggested the possibility of p-type doping due to the large rise in the valence band maximum (VBM) with increasing the amount of Ge solid solution. X-ray photoelectron spectroscopy (XPS) was used in this work to characterize the VBM of SGO thin films.