[15p-E102-1~17] 21.1 Joint Session K "Wide bandgap oxide semiconductor materials and devices"

△ [15p-E102-11] Evaluation of band alinement of rutile-Sn_1-xGe_xO₂ by XPS

〇Yo Nagashima¹, Akira Chikamatsu², Yasushi Hirose³ (1.Univ. of Tokyo, 2.Ochanomizu Univ., 3.Tokyo Metropolitan Univ.)

Keywords:tin oxide, Germanium oxide, XPS

Rutile-Sn_1-xGe_xO₂ (SGO), which is GeO₂ solid solution in SnO₂, a typical oxide semiconductor, is an ultrawide-gap semiconductor with a modulatable band gap in the range ~3.7 eV - ~4.7 eV. First-principles calculations have also suggested the possibility of p-type doping due to the large rise in the valence band maximum (VBM) with increasing the amount of Ge solid solution. X-ray photoelectron spectroscopy (XPS) was used in this work to characterize the VBM of SGO thin films.