The 70th JSAP Spring Meeting 2023

Presentation information

Oral presentation

21 Joint Session K "Wide bandgap oxide semiconductor materials and devices" » 21.1 Joint Session K "Wide bandgap oxide semiconductor materials and devices"

[15p-E102-1~17] 21.1 Joint Session K "Wide bandgap oxide semiconductor materials and devices"

Wed. Mar 15, 2023 1:30 PM - 6:15 PM E102 (Building No. 12)

Mamoru Furuta(Kochi Univ. of Tech.), Keisuke Ide(Tokyo Tech), Ken Goto(Tokyo Univ. Agri. and Tech.)

4:30 PM - 4:45 PM

[15p-E102-12] 【Highlighted Presentation】Selective-area-growth of rutile-type SnO2 on TiO2 (110) substrate

〇(D)Hitoshi Takane1, Takayoshi Oshima2, Katsuhisa Tanaka1, Kentaro Kaneko3 (1.Kyoto Univ., 2.NIMS, 3.Ritsumeikan Univ.)

Keywords:selective area growth, rutile-type structure, tin oxide

ルチル型構造酸化物半導体の転位密度低減を見据え,r-TiO2基板上にr-SnO2の選択成長を試み,その成長機構を明らかにした.まず,選択成長させたr-SnO2の結晶はルチル結晶の平衡形を再現する.また、r-TiO2 (110)基板上においてr-SnO2はVolmer-Weber様式で成長する。TEM観察より,横方向成長領域では,転位が鏡像力効果を受け,その転位の下部で低転位領域が得られた.