Keywords:Reverse leakage current, Killer defect, Schottky barrier diode
β-gallium oxide (β-Ga2O3) is a promising material for power device application owing to large bandgap (4.8 eV) and electric field (8 MV/cm). The availability of its high-quality substrate has accelerated the development of vertical β-Ga2O3- based power devices; for instance, Schottky barrier diodes (SBDs). However, killer defects degraded the performance of these devices. Therefore, we have identified the killer defect in halide vapor phase epitaxial (HVPE) (001) β-Ga2O3 SBDs that served as leakage path by mainly using ultra-high sensitive emission microscopy. As a result, we have found another type of killer defect contains (100) crack and dislocations along  direction below the surfaceserved as leakage current path of the HVPE (001) β-Ga2O3 SBDs.