[15p-E102-1~17] 21.1 合同セッションＫ 「ワイドギャップ酸化物半導体材料・デバイス」

▼ [15p-E102-15] Killer Defects Responsible for Leakage Current in HVPE (001) β-Ga2O3 SBD Observed by Emission Microscopy and Synchrotron X-ray Topography

〇(D)Sayleap Sdoeung¹、Kohei Sasaki²、Akito Kuramata²、Makoto Kasu¹ (1.Saga Univ.、2.Novel Crystal Technology)

キーワード：Reverse leakage current, Killer defect, Schottky barrier diode

β-gallium oxide (β-Ga2O3) is a promising material for power device application owing to large bandgap (4.8 eV) and electric field (8 MV/cm). The availability of its high-quality substrate has accelerated the development of vertical β-Ga2O3- based power devices; for instance, Schottky barrier diodes (SBDs). However, killer defects degraded the performance of these devices. Therefore, we have identified the killer defect in halide vapor phase epitaxial (HVPE) (001) β-Ga2O3 SBDs that served as leakage path by mainly using ultra-high sensitive emission microscopy. As a result, we have found another type of killer defect contains (100) crack and dislocations along [100] direction below the surfaceserved as leakage current path of the HVPE (001) β-Ga2O3 SBDs.