13:30 〜 15:30
▲ [15p-PA01-31] The Effect of External Electric Field on Electronic and Spin Properties of MoS2-graphene van der Waals Heterostructures
キーワード：graphene, TMD, heterostructure
The most well-known 2D material, graphene, offers a wide range of potential uses in spintronics, and electrical devices. Transitional-metal dichalcogenides (TMDs) have received a lot of attention following the discovery of graphene because they exhibit direct band gaps that match to the visible light spectrum, indicating the possibility of optoelectronic device applications[1]. Understanding the electronic properties and how to control them become one crucial aspect to creating such new devices, addressing the significance of optoelectronic application. As of now, it has been discovered that introducing an electric field is a great approach for adjusting the electronic properties of heterostructures. In this study, by using first-principles calculations, we provide a comprehensive analysis of the electrical characteristics of MoS2/graphene van der Waals heterostructures and pay particular emphasis to spin-related characteristics including spin Hall conductivity. As the result of forming the heterostructures, a small band gap opening is emerged in the MoS2/graphene originating from symmetry breaking in the system, agreed with previous calculations [2]. Applying external electric field along +z and -z direction has a different effect on the band gap of MoS2/graphene heterostructures. A larger external electric field increases the spin Hall conductivity of in MoS2/graphene heterostructure. The spin Hall conductivity results show that the MoS2/graphene is an interesting heterostructure for spin Hall conductivity properties due to the significant changes depending on the magnitude of the electric field.