[15p-PA06-1~4] 15.5 Group IV crystals and alloys

[15p-PA06-1] Strain Distributions of Carbon-doped Silicon Nanowires along [100] or [110] using X-ray Reciprocal Space Mapping

〇Ichiro Hirosawa^1,2, Kazutoshi Yoshioka^2,3, Takeshi Watanabe⁴, Ryo Yokokawa^2,3, Atsushi Ogura^2,3 (1.SAGA-LS, 2.Meiji Univ. MREL, 3.Meiji Univ., 4.JASRI)

Keywords:Siicon, strain, nanowire

X-ray reciprocal lattice space mapping(RSM) indicates that strain relaxation in C-doped Si nanowires formed on Si substrates parallel to [100] is larger than that in nanowires parallel to [110].