[15p-PB03-1~15] 8 Plasma Electronics (Poster)

[15p-PB03-8] Functionalization of hexagonal boron nitride via dangling bond formation using plasmas in solution

〇Kenichi Inoue^1,2, Naoto Takagi¹, Tsuyohito Ito¹, Yoshiki Shimizu², Kenji Ishikawa³, Masaru Hori³, Kazuo Terashima^1,2 (1.The Univ. of Tokyo, 2.AIST, 3.Nagoya Univ.)

Keywords:Plasma in solution, Hexagonal boron nitride, Surface modification

Plasmas in solution provide reaction fields for surface modification processes, which are effective for hexagonal boron nitride (h-BN). About the reaction mechanism, it has been assumed that dangling bonds formed on h-BN by the plasma could be functionalized with hydroxyl groups by oxidization. In this study, the h-BN modified by plasmas in solution was moderately oxidized under atmospheric environment, and the hydroxyl functionalization via dangling bond formation was analyzed using electron spin resonance and Fourier transform infrared spectroscopy.