[15p-PB05-1~9] 3.10 フォトニック構造・現象（旧3.11）

▲ [15p-PB05-6] Inverse Design of a Hybrid III-V Silicon Nanowire Array Cavity

〇(B)Peter Aubrey Heidt¹、Masato Takiguchi^1,2、Hisashi Sumikura^1,2、Akihiko Shinya^1,2、Masaya Notomi^1,2,3 (1.NTT BRL、2.NTT Nanophotonics、3.Tokyo Tech)

キーワード：inverse design, nanowire, laser

Recently, a design was proposed which introduces 3 or 5 components of an active gain material into a 1D silicon nanobar array on silica. To decrease lasing threshold, we reduce the amount of active material to only a single nanowire in the center of the cavity. Two inversely designed cavities are proposed for rectangular and cylindrical nanowire implants which achieve higher confinement factor (Γ) per wire through the modification of the width and displacement of 12 nanobars near the wire. These reduced mode volume, single nanowire hybrid PhC cavities are promising for future room temperature lasing measurements given their high Q and Γ, and robustness for nanowire length.