[16a-A205-1~8] 15.3 III-V-group epitaxial crystals, Fundamentals of epitaxy

[16a-A205-3] GaInNAs nanowires grown on 2-inch Si substrate without pre-treatment using MBE

〇Keisuke Minehisa^1,2, Hidetoshi Hashimoto^1,2, Kaito Nakama^1,2, Takeru Tanigawa³, Mitsuki Yukimune³, Fumitaro Ishikawa^1,2 (1.Hokkaido Univ., 2.Hokkaido Univ. RCIQE, 3.Ehime Univ.)

Keywords:nanowire, MBE, GaInNAs