[16a-A205-1~8] 15.3 III-V-group epitaxial crystals, Fundamentals of epitaxy

[16a-A205-6] Study on the Binding Energy of Biexcitons Localized at Isoelectronic Traps in Nitrogen δ-Doped GaAs

〇Yuko Yano¹, Kengo Takamiya¹, Sachie Fujikawa¹, Syuhei Yagi¹, Hiroyuki Yaguchi¹, Masataka Kobayashi², Hidefumi Akiyama² (1.Saitama Univ., 2.ISSP, Univ. Tokyo)

Keywords:isoelectronic trap, biexciton emission

In order to generate quantum entangled photon pairs, which are necessary for quantum cryptographic communication, it has been proposed to use biexciton emission from a single isoelectronic trap in semiconductors, and it is known that the binding energy of the biexciton can be positive or negative. In this study, we measured the biexciton emission from isoelectronic traps in nitrogen δ-doped structures fabricated on GaAs substrates with various surface orientations and investigated the dependence of the binding energy on the nitrogen atomic pair arrangement and surface orientation.