The 70th JSAP Spring Meeting 2023

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Oral presentation

13 Semiconductors » 13.7 Compound and power devices, process technology and characterization

[16a-A301-1~9] 13.7 Compound and power devices, process technology and characterization

Thu. Mar 16, 2023 9:30 AM - 12:00 PM A301 (Building No. 6)

Takuji Hosoi(Kwansei Gakuin Univ.)

9:45 AM - 10:00 AM

[16a-A301-2] Verification of Dominant Carrier Scattering Mechanisms in Inversion Layer of SiC MOSFETs with Nitrided Gate Oxide

〇Munetaka Noguchi1, Hiroshi Watanabe1, Koji Kita2, Kazuyasu Nishikawa1 (1.Mitsubishi Electric Corp., 2.The Univ. of Tokyo)

Keywords:SiC, MOSFET, inversion layer