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[16a-A304-7] Optimization of base layer thickness in rear hetero-junction InGaAs cell for four-junction applications
〇Depu Ma1、Gan Li1、Meita Asami1、Kentaroh Watanabe2、Hassanet Sodabanlu2、Masakazu Sugiyama1,2、Yoshiaki Nakano1(1.The Univ. of Tokyo、2.RCAST, the Univ. of Tokyo)