[16a-B401-1~9] 15.4 III-V-group nitride crystals

△ [16a-B401-1] Evaluation of barrier energy and carrier transport property in GaN:Eu/GaN superlattices using terahertz emission spectroscopy

〇Fumikazu Murakami¹, Atsushi Takeo², Yasufumi Fujiwara², Masayoshi Tonouchi¹ (1.ILE, Osaka Univ., 2.GSE, Osaka Univ.)

Keywords:Red LED, GaN:Eu, THz emission spectroscopy

GaN:Eu, gallium nitride (GaN) doped with europium, has attracted much attention as a material for GaN-based red light-emitting diode (LED). Although improvement of LED performance using GaN:Eu/GaN superlattice structure has been reported, the mechanism of the enhancement has not been clarified. In this study, we estimated the barrier energy in the GaN:Eu/GaN superlattice structure by terahertz emission measurements and clarify the carrier behavior. The LED performance enhancement mechanism obtained from the results will be reported.