[16a-B414-1~10] 17.3 層状物質

▲ [16a-B414-10] Synthesis of Few-layer 2D Transition Metal-Dichalcogenides for Electronics and
Optoelectronics: A Prospective of Mist CVD

〇(P)Abdul A Kuddus¹、Kojun Yokoyama²、Shinichiro Mouri¹、Hajime Shirai² (1.Ritsumeikan Univ.、2.Saitama Univ.)

キーワード：TMDC, Mist CVD, MOSFET

Two-dimensional (2D) semiconductors; especially transition metal dichalcogenides (TMDCs) are potential candidates in modern electronic and optoelectronic for ultimate device scaling owing to their efficient electrostatic tunability, atomic thickness, and dangling bond-free surface with superior transport properties [1,2]. To explore and realize their full potential for practical applications, the synthesis of large-scale, uniform, and crystalline TMDC films using economical pathways and in a reproducible manner is one of the top challenges today. In this work, we report the growth of the few-layer TMDC films of MoS₂, WS_2, and WS_2-xSe_x on the Al_1-xTi_xO_y wafer by a solution process, simple mist chemical vapor deposition (Mist-CVD). We also demonstrate their application in FETs and in-plane p-n junction solar cells. Few layers with submillimeter size flakes were obtained.