[16a-D419-1~11] 10.2 Fundamental and exploratory device technologies for spin

▲ [16a-D419-1] [The 44th Young Scientist Award Speech] Sputter-deposited non-collinear antiferromagnetic Mn₃Sn thin films with controlled crystal orientation

〇Juyoung Yoon¹, Takeuchi Yutaro¹, Itoh Ryuuichi¹, Kanai Shun¹, Fukami Shunsuke¹, Ohno Hideo¹ (1.Tohoku Univ.)

Keywords:Spintronics, Antiferromagnet, Thin film

Non-collinear antiferromagnets are recently attracting increasing attention due to the topologically protected exotic properties such as anomalous Hall effect despite the small magnetization. Such effects are governed by the orientation of the kagome lattice, and thus it is of importance to establish thin-film growth technique with controlled crystal orientation to reveal the device functionalities. In this work, we explored stack structures to form Mn₃Sn thin films with controlled kagome plane orientation. We then investigate the correlation between their crystal structure and magnetic/transport properties. This established technique has led to finding various functionalities of non-collinear antiferromagnets such as chiral-spin rotation and full switching of chiral antiferromagnetic order.