Solid phase crystallization of tensile-strained Ge<sub>1−x</sub>Sn<sub>x</sub> films on Si(001) substrates

Tatsuma Hiraide; Tatsuki Oiwa; Shigehisa Shibayama; Mitsuo Sakashita; Osamu Nakatsuka; Masashi Kurosawa

Presentation information

Oral presentation

15 Crystal Engineering » 15.5 Group IV crystals and alloys

[16a-D511-1~10] 15.5 Group IV crystals and alloys

Thu. Mar 16, 2023 9:00 AM - 11:30 AM D511 (Building No. 11)

Kentarou Sawano(Tokyo City Univ.)

10:15 AM - 10:30 AM

[16a-D511-6] Solid phase crystallization of tensile-strained Ge_1−xSn_x films on Si(001) substrates

〇Tatsuma Hiraide¹, Tatsuki Oiwa¹, Shigehisa Shibayama¹, Mitsuo Sakashita¹, Osamu Nakatsuka^1,2, Masashi Kurosawa¹ (1.Grad. Sch. of Eng., Nagoya Univ., 2.IMaSS, Nagoya Univ.)

Keywords:Germanium tin, GeSn, Solid phase crystallization

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Presentation information

[16a-D511-1~10] 15.5 Group IV crystals and alloys

[16a-D511-6] Solid phase crystallization of tensile-strained Ge1−xSnx films on Si(001) substrates

[16a-D511-6] Solid phase crystallization of tensile-strained Ge_1−xSn_x films on Si(001) substrates